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In this work we describe a novel technique for the extraction of nonlinear model for microwave transistors from nonlinear measurements obtained by simultaneously driving the device under test with low- and high-frequency excitations. Specifically, the large-signal operating point of the device is set by large-signal low-frequency excitations. On top of these a tickle tone at high-frequency is applied...
The aim of this paper is to discuss and compare two neural approaches applied in small-signal modelling of microwave FETs. One of them is completely based on artificial neural networks, while the other is a hybrid model putting together artificial neural networks and an equivalent circuit representation of a microwave transistor. Devices with different gate width are considered in this paper. Different...
This paper is aimed at analyzing in detail the construction of a nonlinear lookup table based model for advanced microwave transistors. The accuracy of this modelling approach is tested on FinFETs, which are multiple gate MOSFET structures promising for the further downscaling of CMOS technology into the nanometer regime. An accurate multi-bias small signal equivalent circuit is used as keystone for...
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