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The linear drain current degradation due to hot-carrier stress (HCS) of an n-type LDMOS with shallow-trench isolation (STI) has been investigated through experiments and TCAD predictions under AC pulsed stress conditions. The systematic increase of degradation with frequency and the dependence on rise/fall times and duty cycle has been explained by using a new TCAD approach based on physical models...
A numerical investigation of the hot-carrier behavior of a lateral DMOS transistor with shallow trench isolation (STI) is carried out. The measured drain-current degradation induced by hot-carrier stress (HCS) is nicely reproduced by TCAD results revealing that interface traps are mainly formed at the STI corner close to the channel. The effect of typical device design variations on hot-carrier degradation...
The rugged LDMOS transistors showing a current "enhancement" in their high current-voltage regime are investigated under electrical stress conditions. A new hot-carrier-injection (HCI) effect is observed for the n-channel devices, in that the temperature dependence of the device parameter drift changes with operating conditions: under high injection conditions, an increasing linear current...
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