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Undesired thermal residual stresses and strains always exist in GaN epitaxial film after the process of metal organic chemical vapor deposition (MOCVD) due to difference in thermal expansion coefficients between the silicon substrate and epitaxial layer. These stresses would mostly result in defects such as dislocations, surface roughness, and even cracks in epitaxial layer preventing further device...
Due to large mismatch in coefficients of thermal expansion between the copper via and the silicon of Through Silicon Via(TSV), significant thermal stresses will be induced at the interfaces of copper/dielectric layer (usually SiO2) and dielectric layer/silicon when TSV structure is subjected to subsequent temperature loadings, which would influence the reliability and the electrical performance of...
Multi-physics multi-scale modeling issues in various stages of the LED manufacturing, 3D-SiP, and nano interconnects have been discussed. Molecular dynamics (MD) and finite element method (FEM) have been used to study the scale effect of the material properties and the prediction of the module behaviors which are critical to LED fabrication. We propose a new concept to integrate multi-physics/multi-scale...
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