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Comprehensive studies on random telegraph signal (RTS) noise have been done to understand carrier trapping processes, with a main focus on the large variations of time constants. It is observed that time constant distributions, as well as thermal activation energy distributions, weakly depend on the substrate doping concentrations or surface orientations. For individual traps, time constants are quite...
In this letter, hole mobility characteristics in Si gate-all-around nanowires on (110)-oriented silicon-on-insulator substrate have been studied, based on the advanced split C-V method. Fabricated nanowires have rectangular shape, and the height is fixed to 18 nm. High hole mobility in [110]-directed nanowires (widths ranging from 25 to 68 nm) were observed, illustrating 2.4 X enhancements over the...
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