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The retention degradation mechanism of NBit/NROM (Eitan et al., 2000) is examined by several unique techniques that promise unequivocal results. The in-situ 150degC electrical testing is used to examine the electron/hole stability. We find no discernable electron/hole lateral migration in the nitride. Next, we apply the refill and soft erase methods (Lue et al., 2005) with various electrical conditions...
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