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Spontaneous and piezoelectric polarization could lower the efficiency of GaN-based light-emitting diodes. In order to eliminate or reduce this undesirable effect, m-plane GaN film was prepared by metalorganic chemical vapor deposition (MOCVD) on LiAlO 2 (100) substrate with a GaN buffer layer. Since the c axis of the m-plane GaN lays in the grown plane, the breakage of in-plane symmetry gave...
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