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A systematic implementation of ESD protection for a 17 GHz LNA in 130 nm SiGeC BiCMOS technology is presented. The ability to achieve pre-silicon ESD reliability confidence is demonstrated through the comparison of HBM ESD simulations and measurements on the circuit. The inductor-based ESD protection methodology achieves more than 6 kV HBM ESD robustness for the LNA, the highest ever reported in a...
The presence of active bipolar transistors in a BiCMOS technology increases the latchup susceptibility compared to pure CMOS processes, due to the injection of carriers in the substrate when the device is switched into saturation. The firing of the parasitic thyristor due to transient forward signals on a diode and the influence of the active bipolar transistors on this firing are examined. It is...
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