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A C-band high-power amplifier with two GaN-based FET chips exhibits record output powers under continuous-wave (CW) and pulsed operation conditions. At 5.0 GHz, the developed GaN-FET amplifier delivers a CW 208 W output power with 11.9 dB linear gain and 34% power-added efficiency. It also shows a pulsed 232 W output power with 8.3 dB linear gain.
Novel 10-fibre connectors have been developed based on a magnetic self-aligning mechanism. The magnetic-alloy-clad fibres for the connector are attracted into V-grooves by a permanent magnet. The average connection loss is 0.4 dB with index matching. The loss for each connection point remains constant within a deviation of 0.005 dB, the measurement accuracy, for disengagement/re-engagement cycles...
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