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This paper proposes a Pai-Sigma matchline scheme to reduce the compare (search) power of a ternary content addressable memory (TCAM). The proposed matchline does not incur the issues of charge sharing and short circuit current, which typically exist in the hybrid nand-nor matchline. Moreover, the switching activity of the search lines of a TCAM with the proposed matchlines is low. A 32 64-bit...
Within-chip variability has become a serious problem in modern nano-scale technologies, which is particular true for semiconductor memory designs. This paper proposes four-types of variability-tolerant (VT) binary content addressable memory (BCAM) cells. The VT-BCAM cells are designed by separating the read port from the write port such that the sizing for read static noise margin (SNM) and write...
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