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In this study, amorphous Cu–Al–O films were deposited onto a (100) p-type silicon substrate by a magnetron sputtering system. The films were then annealed at 700°C and 800°C for 2h in N 2 , air and O 2 . X-ray diffraction patterns showed that the as-deposited films were amorphous. When the films were annealed at 700°C, the monoclinic-CuO and spinel-CuAl 2 O 4 phases...
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