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Cuprous oxide films were prepared by the post-annealing of cupric oxide using an atmospheric pressure microwave plasma torch. Metallic copper films were deposited on glass substrate by magnetron sputtering. Then the films were annealed in air at 500 °C for 12 h, and the formation of cupric oxide observed. The annealed films were further treated by nitrogen plasma at a power of 800 W for 10 and 20 min...
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