The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Nonlinear dynamics of free carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using the intense few-cycle source available at the Advanced Laser Light Source (ALLS). Techniques such as Z-scan and optical-pump/THz-probe are employed to explore nonlinear interactions in an n-doped InGaAs thin film and a photoexcited GaAs sample, respectively. The physical mechanism that...
The nonlinear interaction of intense few-cycle terahertz pulses with free carriers in semiconductors is studied in both n-doped and photoexcited systems. Intervalley scattering is found to cause ultrafast modulation and bleaching of the terahertz absorption.
We have performed open-aperture Z-scan measurements on n-doped InGaAs using intense few-cycle terahertz pulses. We observe a significant bleaching of the terahertz pulse absorption attributed to terahertz-electric-field-induced intervalley carrier scattering.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.