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In this paper, a W-band power amplifier (PA) is presented by using 1 µm emitter length InP/InGaAs DHBT technology. The PA is consisted by 2 stages cascode cells and a common-emitter cell. The total circuit achieves more than 14 dB associate gain from 90 GHz to 98 GHz with input return loss greater than 30 dB and output return loss greater than 7 dB. The saturation output power reaches 18.5 dBm at...
This paper presents a general weak nonlinearity model that can be used to model, analyze and describe the distortion behavior of various low noise amplifier topologies in both narrowband and wideband applications. Represented by compact closed-form expressions our model can be easily utilized by both circuit designers and LNA design automation algorithms. Simulations for three LNA topologies at different...
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