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Thermal performance of AlGaN/GaN HEMT is a critical issue during the design stage, since it significantly affect the lifetime of the device. This paper introduces a three-dimensional modeling technique including electro-thermal coupling effects for investing the thermal characteristic of the AlGaN/GaN HEMT. The method achieves a good balance between simulation time and accuracy through iterative calculation...
This is our first report on the high performance 1 mm AlGaN/GaN high electron mobility transistor (HEMT) which was developed using home-made AlGaN/GaN epitaxy structures based on SiC substrate. Metal-organic chemical vapor deposition (MOCVD) was used to generate the epitaxy layers. Corresponding experiments show that the device has a gate length of 0.8 μm exhibiting drain current density of 1.16 A/mm,...
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