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In this paper, thermal cycling of silicon power semiconductor dies mounted on polycrystalline diamond and aluminum nitride insulated substrates is presented. Thermal strain, stress and safety factor was analysed using ANSYS® static structural analyses tool to understand the dependence of thermal strain and stress. Polycrystalline diamond system exhibits higher thermal stress and low safety factor...
In this paper, a numerical comparison of the thermal performance of silicon and silicon carbide power semiconductor dies mounted on diamond and aluminum nitride substrates is presented. Detailed three-dimensional GIGA simulations predict that a 26% reduction of thermal resistance can be achieved by replacing a silicon power device with a silicon carbide counterpart. Moreover, the thermal resistance...
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