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Recent progress in electroabsorption modulator integrated lasers for high-speed data communications is reviewed. The design of discrete components for high-speed operation and low-power-consumption as well as their large-scale-integration technologies are described.
We have developed 4 × 25-Gbit/s, 1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet (100GBASE-LR4) for the first time. Error-free transmission of 10-km on SMF under 100-Gbit/s (4 × 25-Gbit/s simultaneous) operation is demonstrated.
A traveling-wave-electrode InP n-p-i-n Mach-Zehnder modulator monolithically integrated with a semiconductor optical amplifier was developed. Loss-less operation and full C-band 40-Gbit/s DPSK modulation with a low driving voltage of 3 Vpp was successfully demonstrated.
Operation at 40 Gbit/s with a constant driving voltage (3.5 Vpp) for the entire L-band was demonstrated with a newly developed compact InP-based DQPSK module. A linear DC bias voltage control was employed to compensate for a wavelength dependence of the half-wavelength voltage.
Full C-band 200 km optical duobinary transmission with a constant modulation voltage is demonstrated by using a wavelength tunable laser co-packaged with an InP Mach-Zehnder modulator (MZM). We developed a multi-chip assembly technology for high optical coupling efficiency and achieved an output power of +6.5 dBm CW.
Full C-band 10-Gb/s operation and 100-km single-mode fiber transmission with low power penalty are demonstrated by using an InP Mach-Zehnder modulator co-packaged with a tunable laser array under a constant modulation voltage condition.
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