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An interesting approach is proposed for investigating the thermal stress of AlGaAs/GaAs laser diode bars using infrared thermography. We obtained horizontal and perpendicular profiles of the working thermal stress through the active region in one emitter (emitter 5) at operating currents 0.5 and 1.0 A. The thermal stress at the center of emitter 5 is found to quickly rise to values 2.1 and 3.4 MPa...
In this paper thermal characteristic and front facet of the 808 nm GaAs-Based laser diodes (LDs) before and after degradation are presented and discussed. The relation between thermal characteristic and the change of facet is analyzed. Aging tests are carried out under the conditions of the constant current stress (3 A), and the junction temperature of LD is fixed at 70°C. The total thermal resistance...
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