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Deep level transient spectroscopy has been used to characterise the traps found in MBE grown n-AlGaAs/GaAs HEMTs. In addition to DX centres two further traps common to different HEMT structures are reported. The authors have identified an electron trap (E/sub a/=0.6 eV) distributed nonuniformly in the AlGaAs donor layer, and an interface state trap (E/sub a/=0.55 eV) located close to the two dimensional...
A maskless selective diffusion of silicon into GaAs is achieved by the selective modification of the GaAs surface using low energy Ar sputtering. The Ga rich surface resulting from the Ar sputtering prevents the diffusion of silicon into GaAs.<<ETX>>
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