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A maskless selective diffusion of silicon into GaAs is achieved by the selective modification of the GaAs surface using low energy Ar sputtering. The Ga rich surface resulting from the Ar sputtering prevents the diffusion of silicon into GaAs.<<ETX>>
A GaAs u.h.f. varactor diode featuring linear tuning characteristics over part of its tuning range (450?750 MHz) is reported. The packaged diode has a series resistance of 270 m? at 600 MHz, with 95 m? due to the GaAs epitaxial layer. The design of the diode is presented together with technological details of its construction.
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