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AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 ?? 1013 cm-2 channel sheet charge density and 731 cm2/Vs mobility. 0.2 ??m gate length devices showed 0.73 A/mm maximum drain current density and fT and fmax cutoff frequencies of 21 and 42 GHz.
InAlN/GaN is indeed an alternative to the common AlGaN/GaN heterostructure in electronics and sensing. It enables operation at extremely high temperature once problems with contact metallization and passivation have been solved. It is the only heterostructure known presently, which allows overgrowth of high quality diamond films to combine two of the most stable semiconductors. Thus, applications...
In this study we have investigated heterojunctions on sapphire with barrier thicknesses between 13 nm and 5 nm maintaining a high output current. The results indicate that InAlN/GaN HEMT device structures can be reliably designed and fabricated with barrier layer thicknesses approaching the tunnelling thickness and approaching enhancement mode characteristics. Using Al2O3 as high-k gate dielectric...
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