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We report the utilization of synthetic diamond grown by chemical-vapour-deposition (CVD) for use as metal-semiconductor field-effect-transistors (MESFETs). The lack of a shallow n-type donor means that diamond-based electronic devices are unipolar (p-type). The devices presented in this paper are based on delta-doping. Delta-doping stands for the use of very thin (<5 mm) highly doped (NA 1020 cm...
A maskless selective diffusion of silicon into GaAs is achieved by the selective modification of the GaAs surface using low energy Ar sputtering. The Ga rich surface resulting from the Ar sputtering prevents the diffusion of silicon into GaAs.<<ETX>>
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