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High-k materials, such as HfO2 and Al2O3, are known to have dielectric relaxation effect (i.e. slow polarization). It is reported for the first time in this work that Al2O3, used as a blocking layer of MANOS NAND flash memory cells, causes modulation of channel current through its dielectric relaxation, resulting in severe transient threshold voltage shift as much as ~0.8 V. This Vth drift cannot...
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