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In this research, holes mobility enhancement is studied using Silicon Germanium, SiGe technology. SiGe is deposited on silicon substrate to increase carrier mobility in the device thus will increase the drive current too. The main focus of the research is to investigate the effect of using SiGe on holes mobility. In addition, variation thicknesses of SiGe on device characteristic are also studied...
In this paper, two types of promising high-k dielectric films is studied which are hafnium dioxide, HfO2 and zirconium dioxide,ZrO. Capacitance-Voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric films. The investigation has been carried out by experiment and modeling. Annealing experiments in forming gas at...
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