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In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of InxGa1-xAs1-yNy with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark...
The authors report the avalanche characteristics of the type-II absorption region when subjected to electric fields ranging from 60 kV/cm to 260 kV/cm and compare its behaviour to that of bulk In0.53Ga0.47As. Electron and hole initiated multiplication is performed on the type-II PIN photodiodes with 150 pairs of In0.53Ga0.47As/GaAs0.51Sb0.49 layers in the intrinsic region and highly doped In0.53Ga...
The ability to detect optical signals beyond 1.65 ??m is of technological interest for a number of applications. In this work we describe a novel technology that offers considerable promise for high speed, high sensitivity detection in this region utilising avalanche gain. InGaAs/GaAsSb type II superlattices as the absorption region and InAlAs as the multiplication region can be combined to form a...
Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p+-i-n+ and n +-i-p+ diodes with nominal avalanche region widths between 0.1 and 2.5 mum. With pure electron injection, low excess noise was measured at values corresponding to effective k=beta/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients...
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