The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We investigate threshold voltage shifts induced by heavy ions in sub 70-nm charge-trap cells, based on TaN-Al2O3-SiN-SiO2-Si (TANOS) stack and compare the results with floating gate memories. Large shifts are observed, although to a smaller extent than in floating gate devices with similar feature size. Basic mechanisms leading to the heavy-ion induced charge loss/compensation in the storage layer...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.