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High-performance graphene field-effect transistors are fabricated on two-inch graphene-on-SiC wafers. Epitaxial graphene was synthesized on SiC wafers by thermal annealing to form one to two layers of graphene. The graphene transistors possess high current density of > 1mA/µm, and a cutoff frequency of 170 GHz is achieved for graphene FETs with a gate length of 90 nm. These results unravel the...
<para> We report on the 1/f noise in various ballistic carbon nanotube devices. A common means to characterize the quality of a transistor in terms of noise is to evaluate the ratio of the noise amplitude and the sample resistance . By contacting semiconducting tubes with different metal electrodes we are able to show that a small / value by itself is no indication of a suitable metal/tube...
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