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A VSWR-protected ISM-band PA was realized using a BST based varactor for detuning of the input matching. Output VSWR levels of 30:1 can be tolerated by applying a varactor bias voltage of up to 20 V. The PA delivers 47.4 dBm output power at a maximum PAE of 49.5%. In case of high VSWR conditions the output power can be limited by detuning the varactor. It is shown that the concept protects the transistor...
A novel procedure for voltage standing wave ratio (VSWR) ruggedness testing of GaN-HEMTs is described. In the test the transistor is exposed to an increasing level of VSWR stress and an extensive set of marker parameters are monitored before, during, and after stress. A gate- and drain-lag pulse response test has been developed that reveals VSWR stress influence on slow surface charges. Recovery is...
A novel procedure for voltage standing wave ratio (VSWR) ruggedness testing of GaN-HEMTs is described. In the test the transistor is exposed to an increasing level of VSWR stress and an extensive set of marker parameters are monitored before, during, and after stress. A gate- and drain-lag pulse response test has been developed that reveals VSWR stress influence on slow surface charges. Recovery is...
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