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This article presents a 4–6GHz power amplifier in a 0.25μm GaN integrated technology from UMS foundry. Two unit power cells are combined to increase output power. A new power combiner based on a stacked balun is presented. It has the advantage of occupying a much smaller area than a conventional one. The measured circuit exhibits a peak output power of 37 dBm together with a peak PAE of 47% at 4GHz.
In this paper, a reduced-size modulator with low LO power using a novel sub-harmonic mixer is presented. Compared to a conventional sub-harmonic mixer, this mixer is pumped by differential LO signals rather than quadrature LO signals. Therefore, the numbers of baluns, couplers, and mixing transistors used in this design are less than the ones used in a conventional modulator. The required LO power...
Millimeter-wave Distributed Active Transformer (DAT), baluns and zero degree 1–4 splitter have been optimized to design a 60 GHz parallel Power Amplifier (PA). The implementation is based on a thin digital 7 metal layers (1P7M) Back End of Line (BEOL) and Low Power (LP) transistors in 65 nm CMOS technology from STMicroelectronics. A lumped model based analysis is presented to compare pure voltage...
Design and optimization of 65nm CMOS passive devices which are used in the implementation of a 60GHz Power Amplifier (PA) are presented. The targeted application is the low cost Wireless Personal Area Network (WPAN). A new optimized Radio Frequency (RF)-pad is used to minimize the losses of the PA access. The PA is matched via balun and Transmission Lines (T-Lines). T-Lines ensure both broadband inter-stage...
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