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The paper presents a novel, ultra-compact, reduced-area implementation of a D-type flip-flop using the GaAs Enhancement-Depletion (ED) PHEMT process of the OMMIC with the gate metal layout modified, at the device process level. The D cell has been developed as the building block of a serial to parallel 13-bit shifter embedded within an integrated core-chip for satellite X band SAR applications, but...
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