The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents a high-temperature (HT) gate drive and protection circuit for Silicon–Carbide (SiC) power <sc>mosfet</sc>s entirely built from commercial off-the-shelf HT discrete components. To estimate cost reduction, a brief comparison was made between the proposed circuit and a commercial circuit using silicon-on-insulator integrated circuits. To evaluate performance, power tests...
A 30kVA SiC MOSFET inverter is developed for 180°C ambient temperature operation. The power structure and gate drivers of the inverter system are designed based on SiC MOSFETs and other high temperature (HT) components. The prototype inverter system has been built, and placed in a thermal chamber of 180°C for testing. The HT operation of the inverter has lasted for more than 85 hours accumulatively...
A 30kVA SiC MOSFET inverter is designed and evaluated for 180°C ambient temperature operation. The entire inverter system is designed for high temperature (HT) except the DSP control circuit in room temperature environment. The power structure is designed using SiC MOSFETs and HT capacitors. The gate driver circuits with protections are also designed for the HT environment. The prototype has been...
With the development of SiC technology, current rating of the latest SiC MOSFET module goes up to 300A and the gate charge becomes higher than 1000nC, which demands a high gating current to drive the power module. To explore the high current and high temperature (HT) potentials of the SiC MOSFET module, a gate driver circuit with high output current and HT capability is developed. In this paper, particular...
SiC devices have a great potential to work in high temperature (HT) environment. To protect SiC MOSFET in HT environment, this paper presents a de-saturation protection and under voltage lock out circuit using commercially available discrete transistors rated at 200°C. A discussion on integrated circuit (IC) solution and discrete circuit solution is presented to evaluate feasibility and benefit to...
This paper presents a high temperature (HT) gate drive and protection circuit using commercially available discrete components for SiC Power MOSFETs. The transformer isolated gate drive and protection circuit is designed, built and tested. Temperature dependence of the circuit is investigated and discussed, proving that the discrete component circuit can get rid of the leakage current caused by the...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.