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In this paper, a wafer-level packaging method for white light emitting diodes (LEDs)—which uses a silicon substrate with cavities and through silicon vias (TSVs)—is presented. Common semiconductor manufacture processes are used to fabricate the substrate. Some key processes, such as wet etching, electroplating, and wire bonding are studied and optimized. This method offers a compact and low profile...
We spectrally overlap the magnetic and electric resonances in all-dielectric silicon nanodisk arrays by tuning the disk aspect ratio. This offers new opportunities for functional metasurfaces and conceptually new all-dielectric unidirectional nanoantennas.
An equivalent circuit model for low pitch-to-diameter ratio (P/D) through silicon via (TSV) in three-dimensional integrated circuit (3-D IC) is proposed in this paper. The shunt admittance of this model is calculated based on the method of moments which can accurately capture the proximity effect for both a TSV pair and TSV array. The metal-oxide-semiconductor (MOS) capacitance of TSV is also considered...
In order to obtain good welding quality, some influencing factors of reflow soldering process were studied in this research. A series of welding experiments were conducted in a small reflow soldering oven. Oxidation and surface treatment of soldering materials are important factors in the welding process. Temperature curve of reflow soldering has a great influence on the welding quality, and the welding...
Oxidation reaction, poor wettability and high peak temperature during reflow soldering will do harm to the electronic welding. In order to solve these problems, the welding performance in a nitrogen atmosphere was studied. Nitrogen atmosphere can improve the wettability of solder, reduce the degree of oxidation, and accelerate the welding speed of soldering reaction. A series of soldering experiments...
In actual engineering, a simple robust fault tolerant control is difficult to improve the control precision, either a simple reconstruction of fault-tolerant control is limited by the time-delay of fault diagnosis sub-systems. Considering that, this paper first put forward the theory of fault-tolerant control of ship main/flap fin, in which combined organically with the robust fault-tolerant control,...
A cost-effective process using self-aligned microbonded Ge-beams on silicon waveguides is presented. Heterojunction photodetectors featuring low dark-current of 0.7uA (−2V) and high turn-on current of 10.8 mA (+3V) are demonstrated. The operation bandwidth is 11–16GHz.
In order to solve the selection of effective singular values, first the characteristic of the singular values of both ideal signals and noise signals was analyzed, a determination method of least squares error was proposed. Then the impact on signal de-noising by analyzing different number of singular values, indicated that the number of effective singular values were accurate and reliable by using...
Growth of GaN on silicon is investigated to realize semiconductor device on silicon substrate. Our experiment's emphasis is focused on different of structure of interlayer on Si(111) substrate to growth high quality GaN layer. For the large mismatch coefficient between of Si and GaN, which result in the crake and defect. By investigating the different structure, we can draw a conclusion on what kind...
Silicon-based packaging for light emitting diodes (LEDs) is the tendency of packaging for improving high-power LED performance. In this paper, a simple and high efficient wafer level packaging (WLP) based on silicon with TSV is proposed. Monte-Carlo ray-trace method is implemented to analyze the effect of the size of silicone lens on light extraction efficiency (LEE). The results show that LEE of...
We report a silicon avalanche photodetector with low breakdown voltage of −6.44V. Through a design of narrow interdigitated junction spacing and Ni-silicide process, a high avalanche gain of 30 and low dark current are achieved.
The warpage measurement of silicon wafers is an important main part in semiconductor industry. Shadow moiré and four-step phase shift technique ware used to obtain the out-of-displacement, and the max warpage of the silicon wafer with the size of 20mm×20mm and 0.5mm thickness can be shown in the 3-D warpage result.
The three-dimensional (3D) light-emitting diodes (LEDs) integration package based on silicon with through silicon vias (TSV) attracts a lot of attention because of a better performance, lighter package, and higher integration density. Two main kinds of LED chip including conventional chip (CC) and vertical chip (VC) encapsulated in silicon platform with and without a reflector cup are analyzed through...
Cu-Cu thermocompression bonding has become an important technology for 3D packaging and integration. In this paper, a novel low temperature thermocompression bonding technology using nanostructure Cu layer was presented. By selective dealloying of Cu-Zn alloy in dilute hydrochloric acid, porous nanostructure Cu layer was fabricated on silicon substrate. Scanning electron microscopy (SEM) and X-ray...
TSV fabrication consists of five major processes: via formation, via filling, wafer thinning, wafer handling, and die/wafer bonding [1–2]. Wafer thinning is one of key TSV processes which contributes more than 20% of TSV manufacturing cost and should be studied in a systematic manner. In wafer thinning process, especially for ultra-thin wafers, a reliable handling system is indispensable. The best...
125µm- breath sensor with high sensitivity and rapid response was prepared by using n-type Si: Au material. Its sensitivity coefficient and time constant were 4 V.sec/L and 38 msec, respectively. Its working principle was based on anomalous resistance effect, which not only increased the sensitivity, but also reduced its time constant greatly. Its signal processing system can select the breath signals...
A novel inspecting system combining a tunable exposing unit for inspecting micro-cracks of solar wafers is proposed. With the infrared ray transmitting through silicon wafers, the inspecting images will be captured by a CCD camera, and the micro-crack defects from the images will be apparently appeared. So it can easier to precisely distinguish either micro-cracks or grain boundaries from the images...
A dual-confocal auto-focus sensing module for measuring defocusing positions of specimens in laser machining systems or inspecting devices is proposed. This sensing module can improve the detecting accuracy by analyzing and fitting signals from the difference between the dual optical paths, and miniaturize the optical apparatus with the superior integrated optical design. This auto-focusing module...
The attachment of the silicon piezoresistive pressure sensor die to the substrate is one of the most critical steps in the production of highly accurate pressure sensor. In this paper, single parameter of the adhesive affecting the silicon piezoresistive pressure sensor's output characteristics has been studied. Shear strength of the adhesive with optimized parameters also has been evaluated. Material...
The piezoresistive pressure sensor is one of the major applications of MEMS (Micro-Electro-Mechanical-System) devices. Nowadays, in the field of automotive electronics, silicon-based pressure sensors are playing a significant role in the control of brake, engine, tire pressure, etc. The piezoresistive based engine oil pressure sensor mentioned in this paper is applied to detect the pressure of lubricant...
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