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A regulated cross-couple charge pump with new charging current smoothing technique is proposed and verified in a 0.18-$\mu \text {m}~1.8$ -V/3.3-V CMOS process. The transient behaviors of 3-stage cross-couple charge pump and the expressions for the charging current are described in detail. The experiment results show that the charging current ripples are reduced by a factor of three through using...
A 7-bit 26MS/s SAR (successive approximation register) ADC is presented in this paper for the application of ZigBee receiver. Compared to the conventional method, the set-and-down method reduces the average switching energy by around 80%. Dynamic comparator is chosen to diminish the signal-dependent offset caused by the non-fixed input common-mode voltage. A prototype ADC was implemented in a CMOS...
A micromachined acceleration sensor for high-g detection is presented, which introduces silicon carbide as a mechanical material. The sensor structure itself consists of a fixed capacitor and a changeable one whose top plate moves perpendicular to the chip surface. The external acceleration can be obtained by measuring the change of the capacitance. Conventional surface micro-machining technologies...
In advanced IC processes, the physical properties of wires (width, thickness, and resistance) vary depending on the surrounding wiring. We modified the EMX electromagnetic simulator to allow width- and spacing-dependent properties to be given in the process description. EMX automatically modifies the drawn layout to mimic the fabrication process. We validate our approach by comparing to measurements...
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