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The block erase requirement in NAND Flash devices leads to the need for garbage collection. Garbage collection results in write amplification, that is, to an increase in the number of physical page programming operations. Write amplification adversely impacts the limited lifetime of a NAND Flash device, and can add significant system overhead unless a large spare factor is maintained. This paper proposes...
Phase Change Memory (PCM) is emerging as a promising technology to build large-scale main memory systems in a cost-effective manner. A characteristic of PCM is that it has write latency much higher than read latency. A higher write latency can typically be tolerated using buffers. However, once a write request is scheduled for service to a bank, it can still cause increased latency for later arriving...
We introduce a general model of the rewritable storage channel in which rewriting can be used to improve storage capacity at the cost of encoding time. We then focus on a particular rewritable storage channel and show that if the average number of writes increases by a factor of c, storage capacity increases by an additional log c bits; we conjecture that capacity gains due to iterations for other...
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