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Thin-film field-effect transistors are fabricated by use of fluorinated amorphous-silicon alloy (a-Si:F) containing no hydrogen. The characteristics of transistors such as on-off current ratio are comparable to those of hydrogenated amorphous-silicon transistors and are unchanged after 600?C annealing.
Taking carrier freeze-out into account|a novel structure for depletion-type m.o.s.f.e.t.s suitable for low-temperature operation is proposed. Its channel consists of two regions; a relatively wide, low-impurity-density region and a relatively narrow, high-impurity-density region. It is estimated that the proposed structure has more square-law-like load character istics and higher current density than...
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