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The large parasitic resistance has become a critical limiting factor to on current (ION) of FinFET and nanowire devices. Fully metallic source and drain (MSD) process is one of the most promising solutions but it often suffers from intolerant junction leakage in bulk FETs. In this paper, fully MSD process on fin-on-insulator (FOI) FinFET is investigated extensively for the first time. By forming fully...
This paper proposes a quantitative method to evaluate system resilience. By dividing objects into system level and component level, we present two system resilience indexes (ER and p) based on minimal cut-set and its calculation method under continuous disruptive events, considering the influence of component and system structure on system resilience. In addition, the sensitivities of components to...
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