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Ultrafast modulation of interband-resonant light by intersubband-resonant light in n-doped GaAs/AlGaAs and GaN/AlGaN quantum wells was investigated by femtosecond pump-probe technique. A planar-type AlGaAs/GaAs modulation device shows a modulation speed of ∼1 ps at room temperature. The observed modulation efficiency indicates that 99% modulation can be achieved with a control pulse energy of ∼1 pJ...
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