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The electron beam doping (EBD) of nitrogen (N) into an epilayer of the ZnCdS system grown on a GaAs substrate was investigated. The surface of Zn-Cd-S was covered by an overlayer of zincnitride (Zn 3 N 2 ) (t 1 mm) and the overlayer surface was irradiated with high-energy electrons. The concentration profiles of N atoms in the epilayer were measured by using secondary-ion-mass spectrometry...
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