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A 3.5 watt, 35 GHz power amplifier MMIC has been developed. The amplifier exhibits high performance at low processing cost, through the use of a commercially available 6-inch, 0.15-μm pHEMT process with 100 μm thick substrate. The single-ended four stage amplifier MMIC has 22 dB of gain at 35 GHz, 3.5 watts saturated output power (35.5 dBm), and power added efficiency of more than 25%, within a chip...
A family of robust and cost effective 44-GHz microstrip MMIC power amplifiers has been developed based on a standard 6-inch, 0.15-mum GaAs power pHEMT production process on 100-mum substrate thickness. These amplifiers provide high output powers at 44-GHz with a MTTF exceeding two million hours at 75degC backplate temperature. The single-ended, 3-stage amplifier MMIC has more than 15 dB small signal...
A family of robust and cost effective 44-GHz microstrip MMIC power amplifiers has been developed based on a standard 6-inch, 0.15-μm GaAs power pHEMT production process on 100-μm substrate thickness. These amplifiers provide high output powers at 44-GHz with a MTTF exceeding two million hours at 75 °C backplate temperature. The single-ended, 3-stage amplifier MMIC has more than 15 dB small signal...
The performance of a compact power amplifier MMIC for 35 to 45 GHz applications is reported. Using a standard 6-inch, 0.15-/spl mu/m GaAs power PHEMT technology on 100-/spl mu/m substrate thickness, in combination with appropriate compact circuit topologies, this microstrip power amplifier achieved a linear gain of more than 24 dB over the 36 to 45 GHz frequency range. At 5 V and 500 mA bias, an output...
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