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The objective of this work is to develop procedures for growing high-quality epitaxial Cu2ZnSnS4 thin films. We deposited our films by molecular beam epitaxy, with different growth parameters, on [100]- and [111]-oriented Si substrates. To study the growth of the films, we used electron backscatter diffraction. We found that, under the right conditions, we were able to grow epitaxial [111]-oriented...
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