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In this work, random telegraph noise (RTN) associated to discrete current fluctuations in the high resistive state of Ni/HfO2-based RRAM devices is investigated. For this purpose, a dedicated software tool has been developed to control the instrumentation and to perform successive and smart RTN measurements in the time domain. After data acquisition, the advanced Weighted Time Lag (WTL) method is...
A method to separate the localized current through the conductive filament from the area distributed gate current at high resistance state in resistive switching (RS) devices is presented. The method uses MOSFETs as RS devices and it is based in the evaluation of the location of the filament along the transistor channel.
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