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Fabrication of p-n structure for any photovoltaic device is a crucial step. In this paper optimized growth of B-doped p-BaSi2 layer grown by molecular beam epitaxy on Si(111) were presented first. The acceptor level of the B-atoms was estimated to be approximately 23 meV. High hole concentrations exceeding 1×1020 cm−3 were achieved via dopant activation using RTA at 800 °C in Ar. By using this optimized...
B-doped p-BaSi2 layers growth by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) on hole concentrations were presented. The influence of B-doping on band gap shrinkage was also addressed. The hole concentration was controlled in the range between 1017 and 1020 cm−3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level of the B atoms...
Room temperature 1.6 mum p+-Si/beta-FeSi2/n+-Si double heterostructures light-emitting diodes is fabricated on Si(111) substrate using molecular-beam epitaxy. The electroluminescence intensity is improved by increasing the thickness of beta-FeSi2 active layer and by embedding the beta-FeSi2 at heavily-doped Si p-n junction, which is making it possible to evaluate the emission power and quantum efficiency...
We have fabricated Si/β-FeSi2/Si double heterostructures light-emitting diodes on Si(001) by molecular beam epitaxy and 1.6 μm electroluminescence was realized at room temperature. The origin of luminescence was investigated using time-resolved photoluminescence measurements.
The hole mobilities increased and hole densities decreased by one order of magnitude in intentionally undoped p-type beta-FeSi2 films formed with high-purity 5N-Fe source. The measured mobilities were reproduced well by considering several scattering mechanisms.
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