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At very low temperature, when optical phonon emission is the dominant scattering mechanism, the phenomenon known as Optical Phonon Transit Time Resonance (OPTTR) may originate current oscillations in n+ nn+ diodes at frequencies in the terahertz range. In this work, by means of Monte Carlo simulations, we study the optimum conditions for the onset of such mechanism in GaN diodes. For this purpose,...
By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 400 GHz are predicted, reaching more than 600 GHz for 0.5 μm. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes...
In this work, by means of Monte Carlo simulations, we analyze the presence of a resonance in the high-frequency response of an asymmetric nonlinear nanodiode. This device exhibits a tunable-by-geometry resonant DC current response to AC voltage excitations in the THz range. The resonance is linked to a noise mechanism: collective charge fluctuations in the space-charge region around the active channel...
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