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By means of a Monte Carlo simulation, we have studied the collector transit region of an innovative InAs/AlSb quantum hot electron transistor constituted by a 100 nm-long InAs bulk region. This original vertical transport device has the potential to efficiently exploit the unrivalled transport properties of InAs to reach THz frequencies.
We report on negative differential transconductance (NDT) effect in Y-branch nanojunctions which leads to small-signal nonreciprocity of the device for certain biasing schemes. We present the dc analysis of the device from which we identify the bias regions where NDT effect occurs. We compare experimental dc measurements with results of Monte Carlo simulations, which yields very good qualitative and...
When the drain-source bias is sufficiently high the emission spectra of HEMTs show peaks at THz frequencies. In this work, we will show the results of Monte Carlo simulations of 80-nm-gate InAlAs/InGaAs HEMTs where ultra-high frequency (in the THz range) Gunn-like oscillations in the gate-drain region of the devices have been observed. Such high frequency implies that the drift velocity of the high...
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