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The electrical properties of InxGa1-xAs (x=0.53, x=0.65) MOSFETs have been studied for three different ex-situ surface passivation techniques (HF clean, (NH4)2S clean and PECVD a-Si interlayer) with HfO2 gate dielectric (4 nm and 8 nm) and Ni/Au gate metal. In0.65Ga0.35As devices demonstrate much higher drive current than In0.53Ga0.47As devices. Devices with an a-Si IPL exhibit the highest drive current...
The extraction of the effective mobility on In0.53 Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied and shown to be greater than 3600 cm2/V middots. The removal of Cit response in the split C-V measurement of these devices is crucial to the accurate analysis of these devices. Low-temperature split C-V can be used to freeze out the Dit response to the ac signal but...
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