The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Negative bias temperature instability (NBTI) is studied in plasma (PNO) and thermal (TNO) Si-oxynitride devices having varying EOT. Threshold voltage shift (DeltaVT) and its field (EOX), temperature (T) and time (t) dependencies obtained from no-delay on-the-fly linear drain current (IDLIN) measurements are carefully compared to that obtained from charge pumping (CP). It is shown that thin and thick...
This paper reviews the experimental and modeling efforts to understand the mechanism of Negative Bias Temperature Instability (NBTI) in p-MOSFETs, which is becoming a serious reliability concern for analog and digital CMOS circuits. Conditions for interface and bulk trap generation and their dependence onstress voltage and oxide field, temperature and time are discussed. The role of inversion layer...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.