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This paper presents design of an improved start-up circuit for a micro scale solar energy harvesting system. A wide input voltage range (270mV–1.8V) start-up circuit that can work in strong as well as weak illumination levels without causing any stress and reliability issues to the CMOS devices has been proposed. The use of native device (zero-Vth) and ultra-low power Band-gap Reference (BGR) helps...
Established RF CMOS switch contains MOSFET in its main architecture with a 5.0 V of control voltage and required high value of resistance in circuitry of transceivers to detect the signal. To avoid the high value of control voltage and those resistances, we proposed a Double-Pole Four-Throw switch using RF CMOS technology and verified its performance interns of currents and switching speed. Also to...
In this paper, we have designed a Double-Pole Four-Throw (DP4T) RF CMOS switch, using Double-Gate (DG) MOSFET which has a high dielectric Hafnium-dioxide (HfO2) in place of Silicon-dioxide (SiO2). The performance of HfO2 for the switch such as an effective ON-resistance, attenuation, flat-band capacitance, average dynamic power, doping densities, Debye length, and mobility of carriers, barrier heights...
In this paper, we have investigated a circuit model of the on-wafer interconnects for high-speed CMOS integrated circuits (ICs). Along with increasing the operating frequency, there are various factors like chip size, circuit density, complexity, cost and delay which make interconnects an important issue that has to be considered while designing ICs. At GHz frequencies, long interconnect wires exhibit...
In this paper, we have explored the design features of a Double-Pole Four-Throw (DP4T) RF CMOS switch with use of a novel Vertical Slit Field Effect Transistor (VSFET). This proposed switch circuit uses the double-gate which minimizes the number of transistors and increases the logic density of the transistor per unit area as compare to simple switch. These double gates are independently controlled...
In the wireless telecommunication systems, for increasing interest in RF switch using Complementary Metal Oxide Semiconductor (CMOS) technology, for high frequency is greatly integrated. In this paper, we use the Hafnium-dioxide material as dielectric substrate for designing a model of CMOS which is used for double-gate MOSFET in DP4T RF CMOS switch. This proposed model is compact and robust as well...
Demand of radio frequency switches using Metal-Oxide-Semiconductor (MOS) technology at high-frequencies for wireless telecommunication system is increasing drastically. This paper presents the results for the development of a cell library that includes the basics of the design parameters for n-MOS transistor and p-MOS transistor to design a RF CMOS switch. The cell library design includes the properties...
In this paper, we have discussed the attenuation with ON resistance, isolation and switching speed of a Double-Pole Four-Throw (DP4T) RF CMOS switch, with properties of symmetric double-gate (DG) MOSFET to make obvious the advantages for DG circuits and reduce the number of transistors which increases the circuit density per unit area in addition to functionality as compare to simple CMOS switch....
Elimination of the p-MOS transistor from the pass gate network significantly reduces the parasitic capacitances associated with each node in the circuit, thus, the operation speed is typically higher as compared to the CMOS counterpart. But then the improvement in the transient characteristics comes at the price of increased process complexity. In Complementary pass transistor logic (CPL) circuit,...
Circuit with double gates using independently controlled gates have been proposed to reduce the number of gates and to increase the logic densities per area. This paper introduces a vertical slit FET (double gate transistor) which has been demonstrated with the help of figures with unique independent double gate properties to demonstrate the possible advantages for independent double gate circuits...
To avoid the uses of multiple RF chain associated with the multiple antennas, RF switch is most essential component. Multiple antennas systems are used to replace traditional single antennas circuitry in the radio transceiver system in order to improve the transmission capability and reliability. The desired switching system must have low cost and simple structure, yet still can capture all the advantage...
A CMOS DAC with a 4th order digital DeltaSigma modulator achieves more than 94dB SFDR and 84dB SNDR for a conversion bandwidth of 2.2MHz and an over-sampling ratio of eight. A post modulator digital FIR filter increases jitter immunity and a reduced activity data-weighted-averaging (RADWA) scheme improves SFDR without any noticeable degradation in the SNDR. The prototype chip that contains the RA-DWA...
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