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Wideband amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT) structures. All designs are realized in microstrip transmission line technology. The wideband amplifier MMICs operate up to a frequency of 18GHz. A number of measurements have...
High power amplifiers for a next generation of T/R-modules for future X-band active array antennas are realized on the bases of novel AlGaN/GaN HEMT structures, which are epitaxially grown on SiC wafer substrates. Both, hybrid and monolithically integrated circuits are designed and realized as key elements for transmit chains. Based on hybrid designs excellent peak power levels of 23 W (43.6 dBm)...
AlGaN/GaN-based HEMT MMICs on s.i. SiC wafer substrates are designed and realized for linear broadband amplifiers. Electrical performance data and assembly technology issues are presented in this paper. The linear broadband amplifier MMIC operates in the frequency range from 9 GHz to 19 GHz and is fabricated in microstrip technology including via-holes. The measured small signal gain is about 13 dB...
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