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A next generation of AESA antennas will be challenged with the need for lower size, weight, power and cost (SWAP-C). This leads to enhanced demands especially with regard to the integration density of the RF-part inside a T/R module. The semiconductor material GaN has proven its capacity for high power amplifiers, robust receive components as well as switch components for separation of transmit and...
Wideband amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMICs) on the basis of novel InAlGaN/GaN high electron mobility transistor (HEMT) structures. All designs are realized in microstrip transmission line technology. The wideband amplifier MMICs operate up to a frequency of 18GHz. A number of measurements have...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have...
A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have...
Amplifiers for a next generation of T/R-modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the bases of novel AlGaN/GaN HEMT structures. Both, low noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the...
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