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It is found that electroluminescent mode aging at high-temperature and high-current levels is useful for selecting long-lived InGaAsP 1.3 ?m lasers. Lasers selected by this screening have little change in threshold current or forward voltage through the aging test at an elevated temperature with constant light-output power.
Transverse mode stabilisation of InGaAsP/InP buried crescent laser diodes emitting at 1.3 ?m is described. Width and thickness of the active region have been reduced to stabilise the transverse mode. Operation up to 17 mW/facet in a stable transverse mode and threshold current as low as 12 mA in CW operation have been obtained.
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