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The sensitivity to EOS/ESD events of stand-alone Ge2Sb2Te5 (GST) alloy structures, heart of phase change memories, is here investigated. Analytical storage elements were tested from 3 ns up to 1 ms TLP regimes, studying the impact of both GST and heater widths on the device robustness, and reliability. It is also demonstrated that ESD phenomena can induce the reset of the memory content whether not...
We investigate Total Ionizing Dose effects on 4 Mbit Phase Change Memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the Bit-Line and the Word-Line selector MOSFETs. Finally, radiation...
We investigate total ionizing dose effects on 4Mbit phase change memories (PCM) arrays. We demonstrate a high robustness of PCM against ionizing radiation. We irradiated PCM with 8-MeV electrons. Only small variations are measured in the cell distributions after irradiation. The primary cause of these variations is the degradation of the bit-line and the word-line selection MOSFETs. Finally, radiation...
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